By Nevill F. Mott, Edward Arthur Davis

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Additional resources for Electronic Processes in Non-Crystalline Materials

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Anderson found that there is no diffusion if V0/B is greater than a constant that depends on the co-ordination number z. This means that, if Vo/B is greater than this constant, all the wavefunctions for an electron in the system are of the type shown in Fig. 2(c), decaying with distance r from the neighbourhood of some well n. 37) the coefficients An having random phases as before. Another and perhaps preferable way of expressing the Anderson condition is to take for the initial state an electron localized in a large volume of diameter AJC, the energy being defined as closely as allowed by the uncertainty principle.

A discussion of this due to Grant and Davis (1974) is described in Chapter 6. Also some distortion of the surrounding material will occur near a trapped electron, which may mean that part of w is of polar on type. 74) where kE = EC — E^. The quantity ve\, an electronic frequency, is expected to be considerably larger than ^ph, so a 'kink' in the conductivity temperature curve is expected. 2. The kink is also observed in the measurements of the drift mobility and provides perhaps the strongest evidence for a sharp change in ^ at a mobility edge in an amorphous semiconductor.

Since the conductivity of a degenerate electron gas depends in the low-temperature limit only on the behaviour of the wavefunctions at EF, the Anderson transition gives a method of locating the mobility edge with more precision than is possible for materials and ranges of temperature where a non-degenerate gas is involved. T H E O R Y OF ELECTRONS IN A NON-CRYSTALLINE M E D I U M 39 No discontinuity in the electronic specific heat is expected at an Anderson transition, because N(E) shows no discontinuity (cf.

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Electronic Processes in Non-Crystalline Materials by Nevill F. Mott, Edward Arthur Davis
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